very large-scale integration(vlsi)中文什么意思

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As the density of very large - scale integration ( vlsi ) chips increases , the probability of introducing defects on the chips during the fabrication process also increase
隨著超大規(guī)模集成電路芯片生產(chǎn)技術(shù)的發(fā)展，單片芯片的集成度越來(lái)越高。要想一次生產(chǎn)出沒(méi)有任何缺陷的芯片已不太可能。
Especially , mesfet devices fabricated on lec si - gaas substrate have been adopted into very large - scale integration ( vlsi ) and monolithic microwave integrated circuit ( mmic ) extensively . therefore , it is necessary to study the influence of defects in substrate material of lec si - gaas on performance of mesfet to meet the need of design and fabrication of gaas ic
以液封直拉半絕緣gaas為襯底的金屬半導(dǎo)體場(chǎng)效應(yīng)晶體管( mesfet )器件是超大規(guī)模集成電路和單片微波集成電路廣泛采用的器件結(jié)構(gòu)，因此研究lec法生長(zhǎng)si - gaas ( lecsi - gaas )襯底材料特性對(duì)mesfet器件性能的影響，對(duì)gaas集成電路和相關(guān)器件的設(shè)計(jì)及制造是非常必要的。

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